Модуль IGBT fs225r12ke3 s1

32300,00 ₽

Артикул: b163a4f7cbfa Категории: , ,

      Описание
      Product Category

      IGBT Modules

      Manufacturer
      Infineon
      RoHS
      No
      Product
      IGBT Silicon Modules
      Configuration
      Hex
      Collector- Emitter Voltage VCEO Max
      1200 V
      Collector-Emitter Saturation Voltage
      1.7 V
      Continuous Collector Current at 25 C
      325 A
      Gate-Emitter Leakage Current
      400 nA
      Pd — Power Dissipation
      1.15 kW
      Package Case
      EconoPACK+
      Maximum Operating Temperature
      + 125 C
      Packaging
      Tray
      Brand
      Infineon Technologies
      Height
      17 mm
      Length
      162 mm
      Maximum Gate Emitter Voltage
      +- 20 V
      Minimum Operating Temperature
      — 40 C
      Mounting Style
      Screw
      Factory Pack Quantity
      4
      Width
      150 mm