GD150FFL120C6S силовой модуль igbt

Symbol Description Value Unit VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ±20 V IC Collector Current @ TC=25o C @ TC=100o C 240 150 A ICM Pulsed Collector Current tp=1ms 300 A PD Maximum Power Dissipation @ Tj=175o C 888 W Diode Symbol Description Value Unit VRRM Repetitive Peak Reverse Voltage 1200 V IF Diode Continuous Forward Current 150 A IFM Diode Maximum Forward Current tp=1ms 300 A Module Symbol Description Value Unit Tjmax Maximum Junction Temperature 175 o C Tjop Operating Junction Temperature -40 to +150 o C TSTG Storage Temperature Range -40 to +125 o C VISO Isolation Voltage RMS,f=50Hz,t=1min 4000 V